From Gate
to Global.
Sub-2nm process nodes, engineered for the logic that runs every device on earth. Transistor densities that redefine what silicon can carry.
Trusted by leading fabless teams
Node by Node.
Every nanometer earned.
Three generations of silicon mastery. Each card reveals a process node — smaller, denser, more power-efficient than the last.
The maturity benchmark.
Consumer electronics, automotive SoCs, 5G modems
Performance vs. Previous Generation
FinFET reaches its limit.
AI accelerators, flagship mobile SoCs, HPC workloads
Performance vs. Previous Generation
The nanosheet era begins.
Enterprise AI ASICs, edge NPUs, next-gen GPU tiles
Performance vs. Previous Generation
The density
escalation.
Four generations of silicon, one continuous trajectory. Watch transistor density, power efficiency, and performance compound across nodes — each bar filled by physics itself.
The path forward.
Each node smaller than physics allows.
FinFET at scale. 520K wpm. Industry workhorse for consumer SoCs.
Second-gen FinFET. 292 MTr/mm². Dominant node for AI mobile.
Nanosheet transistors. 400+ MTr/mm². 75% power reduction vs 7nm.
Specs under NDA. Early access available for qualified partners.
Research phase
Ready to commit to a node?
Sub-5nm capacity is tightening. Supply agreements for 2027 tape-outs require earlier commitments. Start your PDK evaluation now.